Position: Home  > All Categories> Integrated Circuits (ICs) > H03N60

H03N60

Features: • Robust High Voltage Termination• Avalanc he Energy Specified• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecificati...

product image

H03N60 Picture
See larger image
SeekIC No. : 004357379 Detail

H03N60: Features: • Robust High Voltage Termination• Avalanc he Energy Specified• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Character...

H03N60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
H03N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Symbol Parameter VALUE Unit
ID Drain to Current (Continuous) 3 A
IDM Drain to Current (Pulsed) 12 A
VGS Gate-to-Source Voltage (Continue) ±30 V
PD Total Power Dissipation (TC=25)
H03N60E (TO-220AB)
H03N60F (TO-220FP)
55
28		 W
Derate above 25
H03N60E (TO-220AB)
H03N60F (TO-220FP)
0.4
0.33		 W/
Tj, TSTG Operating and Storage Temperature Range -55 to 150
EAS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)		 35 mJ
TL Maximum Lead Temperature for Soldering Purposes, 1/8"
from case for 10 seconds		 260



Description

This high voltage MOSFET H03N60 uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, H03N60 is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, H03N60 is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Line Protection, Backups
BX0023
A20B-1008-0550
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Transformers
TM-09210
BV222-1-00992
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more