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H05N50

Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V ID Drain to Current (Continuou...

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SeekIC No. : 004357382 Detail

H05N50: Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter ...

H05N50 Data Sheet

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Part Number:
H05N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements


Specifications

Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
500
V
ID
Drain to Current (Continuous)
5
A
IDM
Drain to Current (Pulsed) (*1)
20
A
VGS
Gate-to-Source Voltage (Continue)
±30
V
PD
Total Power Dissipation
W
TO-220AB
80
TO-220FP
38
Derate above 25°C
W/°C
TO-220AB
0.59
TO-220FP
0.3
EAS
Single Pulse Avalanche Energy (*2)
300
mJ
IAR
Avalanche Current (*1)
5
A
EAR
Repetitive Avalanche Energy (*1)
7.4
mJ
dv/dt
Peak Diode Recovery (*3)
5
V/ns
Tj
Operating Temperature Range
-55 to 150
°C
Tstg
Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering Purposes, 1/8" from
case for 10 seconds
300
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=24mH, RG=25, IAS=4.5A
*3: ISD4.5A, di/dt75A/us, VDDV(BR)DSS, TJ150°C


Description

This N - Channel MOSFETs H05N50 provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.




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