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H05N60

Features: • Higher Current Rating• Lower RDS(on)• Lower Capacitances• Lower Total Gate Charge• Tighter VSD Specifications• Avalanche Energy SpecifiedSpecifications SYMBOL PARAMETER Value Unit ID Drain to Current (Continuous) 5 mA IDM Drain to C...

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SeekIC No. : 004357383 Detail

H05N60: Features: • Higher Current Rating• Lower RDS(on)• Lower Capacitances• Lower Total Gate Charge• Tighter VSD Specifications• Avalanche Energy SpecifiedSpecification...

H05N60 Data Sheet

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Part Number:
H05N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified


Specifications

SYMBOL PARAMETER Value Unit
ID Drain to Current (Continuous) 5 mA
IDM Drain to Current (Pulsed) 20 mA
VGS Gate-to-Source Voltage (Continue) ±30 mA
PD Total Power Dissipation (TC=25)
H05N60E (TO-220AB)
H05N60F (TO-220FP)		 75
35		 mW
Derate above 25
H05N60E (TO-220AB)
H05N60F (TO-220FP)		 0.56
0.2
Tj,Tstg Storage Temperature -55 to +150
EAS   250 mJ
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)		 260



Description

This advanced high voltage MOSFET H05N60 is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. H05N60 is designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.




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