H11A817

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Maximum Collector Current : 50 mA
Packaging : Bulk
Input Type : DC
Maximum Power Dissipation : 200 mW
Package / Case : PDIP-4
Maximum Collector Emitter Saturation Voltage : 0.2 V
Current Transfer Ratio : 600 %
Maximum Collector Emitter Voltage : 70 V


Features:

Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
Minimum BVCEO of 70V guaranteed




Application

Power supply regulators
Digital logic inputs
Microprocessor inputs




Pinout

Description

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.