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Part Number: H11D1

 

MFG: QTC

 

 

Description: The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitti...


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H11D1 General Description


  The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

H11D1 Maximum Ratings

Parameter Symbol Value Units
TOTAL DEVICE
Storage Temperature
TSTG -55 to +150 °C
Operating Temperature OPR -55 to +100 °C
Lead Solder Temperature TSOL 260 for 10 sec °C
Total Device Power Dissipation @ TA = 25°C PD 260 mW
Derate above 25°C 3.5 mW/°C
EMITTER
*Forward DC Current
IF 80 mA
*Reverse Input Voltage VR 6.0 V
*Forward Current - Peak (1s pulse, 300pps) IF (pk)
3.0 A
*LED Power Dissipation @ TA = 25°C PD 150 mW
Derate above 25°C 1.41 mW/°C

H11D1 Features

*High Voltage
- H11D1, H11D2, BVCER= 300 V
- H11D3, H11D4, BVCER= 200 V
*High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
*Underwriters Laboratory (UL) recognized File# E90700


H11D1 Typical Application

*Power supply regulators
*Digital logic inputs
*Microprocessor inputs
*Appliance sensor systems
*Industrial controls

H11D1 Connection Diagram

H11D1  Connection Diagram

H11D1 datasheet

H11D1
PDF/DataSheet Download

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H11D1 Relative Products

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    The H11C4/ H11C5/ H11C6 are optically coupled SCRs with a gallium arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. These optocouplers can be...

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    The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

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