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MFG:QTC


Part Number: H11D1
MFG: QTC
Description: The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitti...
MFG:QTC


MFG: QTC
Description: The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitti...
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
| Parameter | Symbol | Value | Units |
| TOTAL DEVICE Storage Temperature |
TSTG | -55 to +150 | °C |
| Operating Temperature | T OPR | -55 to +100 | °C |
| Lead Solder Temperature | TSOL | 260 for 10 sec | °C |
| Total Device Power Dissipation @ TA = 25°C | PD | 260 | mW |
| Derate above 25°C | 3.5 | mW/°C | |
| EMITTER *Forward DC Current |
IF | 80 | mA |
| *Reverse Input Voltage | VR | 6.0 | V |
| *Forward Current - Peak (1s pulse, 300pps) | IF (pk) |
3.0 | A |
| *LED Power Dissipation @ TA = 25°C | PD | 150 | mW |
| Derate above 25°C | 1.41 | mW/°C |
*High Voltage
- H11D1, H11D2, BVCER= 300 V
- H11D3, H11D4, BVCER= 200 V
*High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
*Underwriters Laboratory (UL) recognized File# E90700
H11D1
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