Purchase H11F3M, In-stock H11F3M From SeekIC.
MFG:FSC D/C:08+
Part Number: H11F3M
MFG: FSC
D/C: 08+
Description: The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical...
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H11F3M
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DataSheet
General Description
H11F3M General Description
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
H11F3M Maximum Ratings
|
Symbol |
Parameter |
Device |
Value |
Units |
|
TSTG TOPR TSOL |
Storage Temperature Operating Temperature Lead Solder Temperature |
All All All |
-55 to +150 -40 to +100 260 for 10 sec |
|
|
IF VR IF(pk) |
Continuous Forward Current Reverse Voltage Forward Current-Peak(10s pulse,1%duty cycle) |
All All All |
60 5 l |
mA V A |
|
PD |
LED Power Dissipation 25 Ambient Derate Linearly from 25 |
All |
100 |
mW |
|
1.33 |
mW/ | |||
|
PD |
Detector Power Dissipation @ 25 |
All |
300 |
mW |
| Derate linearly from 25 |
4.0 |
mW/ | ||
|
BV4-6 |
Breakdown Voltage (either polarity) |
H11F1M H11F2M |
±30 |
V |
|
H11F3M |
±15 |
V | ||
|
I4-6 |
Continuous Detector Current (either polarity) |
All |
±100 |
A |
H11F3M Features
`100 to 300M
`99.9% linearity
`15pF shunt capacitance
`100G I/O isolation resistance
`Extremely low offset voltage
`60 Vpk-pk signal capability
`No charge injection or latch-up
`ton, toff15s
`UL recognized (File #E90700)
`99.9% linearity
`15pF shunt capacitance
`100G I/O isolation resistance
`Extremely low offset voltage
`60 Vpk-pk signal capability
`No charge injection or latch-up
`ton, toff15s
`UL recognized (File #E90700)
H11F3M Typical Application
·Isolated variable attenuator
·Automatic gain control
·Active filter fine tuning/band switching
·Isolated sample and hold circuit
·Multiplexed, optically isolated A/D conversion
·Automatic gain control
·Active filter fine tuning/band switching
·Isolated sample and hold circuit
·Multiplexed, optically isolated A/D conversion
H11F3M Connection Diagram
H1102
PDF/DataSheet Download
- Datasheet: H1102
- File Size: 107396 KB
- Manufacturer:
- Click here to Download
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The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.The H11F series detector is electrically isolated from the input and performs like an ideal isolated FET designed for distort...
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The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The H11FXM seriesdetector is electrically isolated from the input and performs like an ideal isolated FET designed for di...
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The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.TheH11F series detector is electrically isolated from the input and performs like an ideal isolated FET designed for distorti...
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