Transistor Output Optocouplers Hi Volt Photodarling
H11G1M: Transistor Output Optocouplers Hi Volt Photodarling
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| Input Type : | DC | Maximum Collector Emitter Voltage : | 100 V | ||
| Maximum Collector Emitter Saturation Voltage : | 1 V | Isolation Voltage : | 5300 Vrms | ||
| Maximum Forward Diode Voltage : | 1.5 V | Maximum Power Dissipation : | 260 mW | ||
| Maximum Operating Temperature : | + 100 C | Minimum Operating Temperature : | - 40 C | ||
| Package / Case : | PDIP-6 | Packaging : | Bulk |
| Symbol | Parameter | Value | Units |
| TOTAL DEVICE | |||
| TSTG TOPR TSOL |
Storage Temperature Operating Temperature Lead Solder Temperature (Wave Solder) |
-55 to +150 -40 to +100 260 for 10 sec |
|
| PD | Total Device Power Dissipation @ TA=25 Derate Above 25 |
260 3.5 |
mW mW/ |
| EMITTER | |||
| IF VR IF(pk) |
Forward Input Current Reverse Input Voltage Forward Current Peak (1s pulse, 300pps) |
60 6.0 3.0 |
mA V A |
| PD | LED Power Dissipation @ TA=25 Derate Above 25 |
100 1.8 |
mW mW/ |
| DETECTOR | |||
| VCEO | Collector-Emitter Voltage H11G1M H11G2M H11G3M |
100 80 55 |
V |
| PD | LED Power Dissipation @ TA=25 Derate Above 25 |
200 2.67 |
mW mW/ |
The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
| Technical/Catalog Information | H11G1M |
| Vendor | Fairchild Optoelectronics Group |
| Category | Isolators |
| Voltage - Isolation | 5300Vrms |
| Input Type | DC |
| Output Type | Darlington with Base |
| Current - Output / Channel | 150mA |
| Voltage - Output | 100V |
| Vce Saturation (Max) | 1V |
| Current Transfer Ratio (Min) | 500% @ 5mA |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP |
| Packaging | Tube |
| Number of Circuits | 1 - Single |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | H11G1M H11G1M |