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H2N4126

Features: • Complementary to H2N4124• High Power PT : 625mW at 25°C• High DC Current Gain hFE : 120-360 at IC=2mASpecifications• Maximum TemperaturesStorage Temperature ...................................................................................... -55 ~ +150 °CJunct...

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SeekIC No. : 004357534 Detail

H2N4126: Features: • Complementary to H2N4124• High Power PT : 625mW at 25°C• High DC Current Gain hFE : 120-360 at IC=2mASpecifications• Maximum TemperaturesStorage Temperature ........

H2N4126 Data Sheet

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Part Number:
H2N4126
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Complementary to H2N4124
• High Power PT : 625mW at 25°C
• High DC Current Gain hFE : 120-360 at IC=2mA


Specifications

• Maximum Temperatures
Storage Temperature ...................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage .................................................................................... -25 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ...................................................................................................... -200 mA


Description

The H2N4126 is designed for general purpose switching and amplifier applications.


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