H2N4401

The H2N4401 is a type of pnp epitaxial planar transistor, which is designed for amplifier transistor.

Features of the H2N4401 are:(1)complementary to H2N4403;(2)high power dissipation is 625 mW at 25°C;(3)high DC current gain is 100-300 at 150mA;(4)high breakdown voltage is 40 V Min.

The absolute maximum ratings and characteristics(Ta=25°C) of the H2N4401 can be summarized as:(1)maximum te mperatures:storage temperature is -55°C+150 °C,junction temperature is +150 °C maximum;(2)maximum power dissipation:total power dissipation (Ta=25°C)is 625 mW;(3)maximum voltages and currents (Ta=25°C):VCBO colle ctor to base voltage is 60 V,VCEO collector to emitter voltage is 40 V,VEBO emitter to base voltage is 5V,IC collector current is 600 mA.characteristics:(1):BVCBO is 60V min when IC is 10uA and IE is 0;(2)BVCEO is 40V min when IC is 1mA and IB is 0;(3)BVEBO is 5V min when IE is 10uA and IC is 0;(4):ICEX is 100 nA max when VCE is 35V and VBE is 0.4V;(5):VCE(sat)1 is 400 mV when IC is 150mA and IB is 15mA;(6):hFE5 is 40 min when VCE is 2V and IC is 500mA;(7):fT is 250 MHz min when VCE is 10V, IC is 20mA and f is 100MHz;(8):cob is 6.5 pF max when VCB is 5V, IE is 0 and f is 1MHz.etc.