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Part Number: H3055LJ
Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been ...


Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been ...
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
|
Symbol |
Parameter | Ratings | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±12 | V |
| ID | Drain Current (Continuous) | 13 | A |
| IDM | Drain Current (Pulsed) *1 | 30 | A |
| PD | Total Power Dissipation @TA=25oC | 2 | W |
| PD | Total Power Dissipation @TA=75oC | 1.3 | W |
| Tj, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| RJA | Thermal Resistance Junction to Ambient*2 | 62.5 | °C/W |
H3046
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