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Part Number: H3055LJ

 

 

 

 

Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been ...


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H3055LJ General Description


This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

H3055LJ Maximum Ratings

Symbol

Parameter Ratings Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID Drain Current (Continuous) 13 A
IDM Drain Current (Pulsed) *1 30 A
PD Total Power Dissipation @TA=25oC 2 W
PD Total Power Dissipation @TA=75oC 1.3 W
Tj, Tstg Operating and Storage Temperature Range -55 to +150 °C
RJA Thermal Resistance Junction to Ambient*2 62.5 °C/W
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board

H3055LJ Features

• RDS(on)=45m@VGS=2.5V, ID=5.2A; RDS(on)=35m@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications

H3055LJ Typical Application

• Battery Protection
• Load Switch
• Power Management

H3055LJ datasheet

H3046
PDF/DataSheet Download

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