Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±30 V Drain current ID 70 A Drain peak current ID...
H5N1503P: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
150 |
V |
Gate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
70 |
A |
Drain peak current |
ID(pulse)Note 1 |
210 |
A |
Body-Drain diode reverse Drain current |
IDR |
70 |
A |
Avalanche current |
IAPNote3 |
35 |
|
Avalanche energy |
EARNote3 |
91.8 |
|
Channel dissipation |
Pch Note 2 |
150 |
W |
Channel to case thermal impedance |
ch-c |
0.833 |
|
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |