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H5N2004DS

Features: • Low on-resistance: R DS (on) = 0.38 typ.• Low leakage current: IDSS = 1 A max (at VDS = 200 V)• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)• Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)• Avalanche ...

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SeekIC No. : 004357661 Detail

H5N2004DS: Features: • Low on-resistance: R DS (on) = 0.38 typ.• Low leakage current: IDSS = 1 A max (at VDS = 200 V)• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = ...

H5N2004DS Data Sheet

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Part Number:
H5N2004DS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance: R DS (on) = 0.38 typ.
• Low leakage current: IDSS = 1 A max (at VDS = 200 V)
• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
• Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)
• Avalanche ratings


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID(pulse)
IDR
IDR(pulse)
IAP
Pch
ch-c
Tch
Tstg
200
±30
8
32
8
32
7
30
4.17
150
55 to +150
V
V
A
A
A
A
A
W
C/W
°C
°C



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