Features: ·Low on-resistance·Low leakage current·High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 230 V Gate to source voltage VGSS ±30 V Drain current ID 35 A Drain peak current ID (pulse) Note1 14...
H5N2305PF: Features: ·Low on-resistance·Low leakage current·High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 230 V Gate to source voltage ...
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|
Item |
Symbol |
Rating |
Unit |
| Drain to source voltage |
VDSS |
230 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
35 |
A |
| Drain peak current |
ID (pulse) Note1 |
140 |
A |
| Body-drain diode reverse drain current |
IDR |
35 |
A |
| Body-drain diode reverse drain peak current |
IDR (pulse) Note1 |
140 |
A |
| Avalanche current |
IAP Note3 |
18 |
A |
| Channel dissipation |
Pch Note2 |
60 |
W |
| Channel to case thermal impedance |
ch-c |
2.08 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |