H5N2305PF

Features: ·Low on-resistance·Low leakage current·High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 230 V Gate to source voltage VGSS ±30 V Drain current ID 35 A Drain peak current ID (pulse) Note1 14...

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SeekIC No. : 004357664 Detail

H5N2305PF: Features: ·Low on-resistance·Low leakage current·High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 230 V Gate to source voltage ...

floor Price/Ceiling Price

Part Number:
H5N2305PF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/14

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Product Details

Description



Features:

·Low on-resistance
·Low leakage current
·High speed switching



Specifications

Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
230
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
35
A
Drain peak current
ID (pulse) Note1
140
A
Body-drain diode reverse drain
current
IDR
35
A
Body-drain diode reverse drain
peak current
IDR (pulse) Note1
140
A
Avalanche current
IAP Note3
18
A
Channel dissipation
Pch Note2
60
W
Channel to case thermal impedance
ch-c
2.08
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25
            3. STch = 25, Tch 150



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