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H5N2509P

Features: `Low on-resistance: R DS (on) = 0.053 typ.`Low leakage current: IDSS = 1 A max (at VDS = 250 V, VGS = 0 V)`High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 , VGS = 10 V)`Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)`Avalanche ratingsSpecifications...

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SeekIC No. : 004357675 Detail

H5N2509P: Features: `Low on-resistance: R DS (on) = 0.053 typ.`Low leakage current: IDSS = 1 A max (at VDS = 250 V, VGS = 0 V)`High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 , VGS = 10 V)`Low ...

H5N2509P Data Sheet

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Part Number:
H5N2509P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low on-resistance: R DS (on) = 0.053 typ.
`Low leakage current: IDSS = 1 A max (at VDS = 250 V, VGS = 0 V)
`High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 , VGS = 10 V)
`Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
`Avalanche ratings


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
30
A
Drain peak current
ID (pulse) Note 1
120
A
Body-drain diode reverse drain current
IDR
30
A
Body-drain diode reverse drain peak current
IDR (pulse) Note 1
120
A
Avalanche current
IAP Note 3
30
A
Channel dissipation
Pch Note 2
150
W
Channel to case thermal Impedance
ch-c
0.833
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25
            3. Tch 150


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