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H5N2510DS

Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS ±20 V Drain Current ID 5 A Drain Current (Pulse) ID(pulse)Note 1 20 ...

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H5N2510DS: Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 250 V Gate to Sour...

H5N2510DS Data Sheet

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Part Number:
H5N2510DS
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• Low drive current
• High speed switching


Specifications

Parameter Symbol Ratings UNIT
Drain to Source Voltage VDSS 250 V
Gate to Source Voltage VGSS ±20 V
Drain Current ID 5 A
Drain Current (Pulse) ID(pulse)
Note 1		 20 A
Body-drain diode reverse drain current IDR 5 A
Body-drain diode reverse drain peak current IDR (pulse)
Note 1		 20 A
Channel dissipation Pch 25 W
Channel to case thermal Impedance ch-c 5 /W
Channel Temperature Tch 150
Storage Temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25


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