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H5N2513PL

Features: • Low on-resistance• High speed switching• Built-in fast recovery diodeSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 100 A Peak Drain Current ID(pulse)Note...

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SeekIC No. : 004357678 Detail

H5N2513PL: Features: • Low on-resistance• High speed switching• Built-in fast recovery diodeSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gat...

H5N2513PL Data Sheet

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Part Number:
H5N2513PL
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• High speed switching
• Built-in fast recovery diode


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID 100 A
Peak Drain Current ID(pulse)
Note1		 400 A
Bodydrain diode reverse drain current IDR 100 A
Body-drain diode reverse drain peak current IDR(pulse)
Note1		 400 A
Avalanche current IAPNote3 100 A
Avalanche energy EARNote3 625 mJ
Channel dissipation
PchNote2

250

 W
Channel to case thermal impedance ch-c 0.5 °C/W
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C


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