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H5N2514P

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 70 A Drain peak current ID...

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SeekIC No. : 004357679 Detail

H5N2514P: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate...

H5N2514P Data Sheet

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Part Number:
H5N2514P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Item
Symbol
Ratings
Unit
Drain to Source voltage
VDSS
250
V
Gate to Source voltage
VGSS
±30
V
Drain current
ID
70
A
Drain peak current
ID (pulse) Note1
210
A
Body-Drain diode reverse Drain current
IDR
70
A
Body-Drain diode reverse Drain peak current
IDR (pulse) Note1
210
A
Avalanche current
IAP Note3
35
A
Avalanche energy
EAR Note3
76.5
mJ
Channel dissipation
Pch Note2
200
W
Channel to case thermal impedance
ch-c
0.625
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C


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