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H5N2517FN

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol VALUE Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 20 A Drain peak current ID...

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SeekIC No. : 004357681 Detail

H5N2517FN: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol VALUE Unit Drain to Source voltage VDSS 250 V Gate...

H5N2517FN Data Sheet

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Part Number:
H5N2517FN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Item
Symbol
VALUE
Unit
Drain to Source voltage
VDSS
250
V
Gate to Source voltage
VGSS
±30
V
Drain current
ID
20
A
Drain peak current
ID (pulse)Note1
80
A
Body-Drain diode reverse Drain current
IDR
20
A
Body-Drain diode reverse Drain peak current
IDR(pulse)Note1
80
A
Avalanche current
IAPNote3
7
A
Avalanche energy
EARNote3
3.0
mJ
Channel dissipation
PchNote2
30
W
Channel to case thermal impedance
ch-c
4.17
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. Value at Tc = 25
           3. STch = 25, Tch 150


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