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H5N2522LS

Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 20 A Drain peak c...

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SeekIC No. : 004357685 Detail

H5N2522LS: Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Source volta...

H5N2522LS Data Sheet

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Part Number:
H5N2522LS
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching
• Built-in fast recovery diode


Specifications

Item Symbol Ratings Unit
Drain to Source voltage VDSS 250 V
Gate to Source voltage VGSS ±30 V
Drain current ID 20 A
Drain peak current ID (pulse)Note1 60 A
Body - Drain diode reverse drain current IDR 20 A
Body-drain diode reverse drain peak current IDR(pulse)
Note1		 60 A
Avalanche current IAP
Note3		 25 A
Avalanche energy EAR
Note3		 25 mJ
Channel dissipation PchNote 2 75 W
Channel to case thermal impedance ch-c 1.67 /W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. STch = 25, Tch 150


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