Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 20 A Drain peak c...
H5N2522LS: Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to Source volta...
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Item | Symbol | Ratings | Unit |
Drain to Source voltage | VDSS | 250 | V |
Gate to Source voltage | VGSS | ±30 | V |
Drain current | ID | 20 | A |
Drain peak current | ID (pulse)Note1 | 60 | A |
Body - Drain diode reverse drain current | IDR | 20 | A |
Body-drain diode reverse drain peak current | IDR(pulse) Note1 |
60 | A |
Avalanche current | IAP Note3 |
25 | A |
Avalanche energy | EAR Note3 |
25 | mJ |
Channel dissipation | PchNote 2 | 75 | W |
Channel to case thermal impedance | ch-c | 1.67 | /W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |