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H5N2801P

Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 280 V Gate to Source voltage VGSS ±30 V Drain current ID 60 A Drain peak current ID(pulse) Note1 240 A Bod...

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SeekIC No. : 004357686 Detail

H5N2801P: Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 280 V Gate to Source vol...

H5N2801P Data Sheet

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Part Number:
H5N2801P
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

• Low on-resistance
• Low drive current
• High speed switching


Specifications

Item Symbol Ratings Unit
Drain to Source voltage VDSS 280 V
Gate to Source voltage VGSS ±30 V
Drain current ID 60 A
Drain peak current ID(pulse) Note1 240 A
Body-Drain diode reverse Drain current IDR 60 A
Avalanche current IAP Note3 35 A
Avalanche energy EAR Note3 74.5 mJ
Channel dissipation Pch Note2 150 W
Channel to case thermal impedance ch-c 0.833 /W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C


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