Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 280 V Gate to source voltage VGSS ±30 V Drain current ID 30 A Drain peak current ID...
H5N2803PF: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 280 V Gate...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
280 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
30 |
A |
| Drain peak current |
ID(pulse) Note1 |
120 |
A |
| Body-drain diode reverse drain current |
IDR |
30 |
A |
| Body-Drain diode reverse Drain peak current |
IDR (pulse) Note1 |
120 |
A |
| Avalanche current |
IAP Note 3 |
15 |
A |
| Avalanche energy |
EAR Note3 |
13.6 |
mJ |
| Channel dissipation |
Pch Note 2 |
60 |
W |
| Channel to case thermal impedance |
ch-c |
2.08 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |