Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 280 V Gate to source voltage VGSS ±30 V Drain current ID 30 A Drain peak current ID...
H5N2803PF: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 280 V Gate...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
280 |
V |
Gate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
30 |
A |
Drain peak current |
ID(pulse) Note1 |
120 |
A |
Body-drain diode reverse drain current |
IDR |
30 |
A |
Body-Drain diode reverse Drain peak current |
IDR (pulse) Note1 |
120 |
A |
Avalanche current |
IAP Note 3 |
15 |
A |
Avalanche energy |
EAR Note3 |
13.6 |
mJ |
Channel dissipation |
Pch Note 2 |
60 |
W |
Channel to case thermal impedance |
ch-c |
2.08 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |