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H5N3004P

Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge (Qg)• Avalanche ratingsSpecifications Item SYMBOL MAX UNIT Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain ...

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SeekIC No. : 004357690 Detail

H5N3004P: Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge (Qg)• Avalanche ratingsSpecifications Item SYMBOL MAX UNIT ...

H5N3004P Data Sheet

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Part Number:
H5N3004P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge (Qg)
• Avalanche ratings


Specifications

Item
SYMBOL
MAX
UNIT
Drain to source voltage
VDSS
300
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
25
A
Drain peak current
I (pulse) Note1
100
A
Body-drain diode reverse drain current
IDR
25
A
Body-drain diode reverse drain peak current
I (pulse) Note1
100
A
Avalanche current
IAP Note3
25
A
Channel dissipation
PchNote2
150
W
Channel to case Thermal impedance
ch-c
0.833
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. Value at Tc = 25
           3. Tch 150


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