Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID ...
H5N3008P: Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to source...
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| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
300 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
40 |
A |
| Drain peak current |
ID(pulse)Note 1 |
160 |
A |
| Body-Drain diode reverse Drain current |
IDR |
40 |
A |
| Avalanche current |
IAPNote3 |
30 |
A |
| Channel dissipation |
Pch Note 2 |
150 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |