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H5N3011P

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 300 V Gate to Source voltage VGSS ±30 V Drain current ID 88 A Drain peak current ID (pulse) Note1 176 A ...

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SeekIC No. : 004357696 Detail

H5N3011P: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 300 V Gate to Source v...

H5N3011P Data Sheet

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Part Number:
H5N3011P
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Item Symbol Ratings Unit
Drain to Source voltage VDSS 300 V
Gate to Source voltage VGSS ±30 V
Drain current ID 88 A
Drain peak current ID (pulse) Note1 176 A
Body-Drain diode reverse Drain current IDR 88 A
Body-Drain diode reverse Drain peak current IDR (pulse) Note1 176 A
Avalanche current IAPNote3 30 A
Avalanche energy EARNote3 54 mJ
Channel dissipation Pch Note2 150 W
Channel to case thermal impedance ch-c 0.833 /W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25
3. STch = 25, Tch 150


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