Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge (Qg)Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS +30 V Drain current ID 20 ...
H5N6001P: Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge (Qg)Specifications Item Symbol Ratings Unit Drain to source volta...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
600 |
V |
Gate to source voltage |
VGSS |
+30 |
V |
Drain current |
ID |
20 |
A |
Drain peak current |
ID(pulse) Note1 |
80 |
A |
Body-drain diode reverse drain current |
IDR |
20 |
A |
Body-drain diode reverse drain peak current |
IDR (pulse)Note1 |
80 |
A |
Avalanche current |
IAP Note 3 |
6.5 |
A |
Channel dissipation |
Pch Note2 |
150 |
W |
Channel to case thermal Impedance |
ch-c |
0.833 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |