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H7N0308AB

Features: • Low on-resistanceRDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 30 V Gate to Source voltage VGSS ±20 V Drain c...

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SeekIC No. : 004357858 Detail

H7N0308AB: Features: • Low on-resistanceRDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit ...

H7N0308AB Data Sheet

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Part Number:
H7N0308AB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
RDS (on) = 3.8 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source


Specifications

Item
Symbol
Ratings
Unit
Drain to Source voltage
VDSS
30
V
Gate to Source voltage
VGSS
±20
V
Drain current
ID
70
A
Drain peak current
ID (pulse) Note1
280
A
Channel dissipation
Pch Note 2
70
A
Channel dissipation
Pch Note2
100
W
Channel to case thermal impedance
ch-c
1.25
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C



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