H7N0308CF-E Selling Leads, Price trend, H7N0308CF-E DataSheet download, circuit diagram from SeekIC.com

Features: • Low on-resistance RDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A ...

See larger image

SeekIC No. : 004357860 Detail

H7N0308CF-E: Features: • Low on-resistance RDS (on) = 3.8 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain ...

H7N0308CF-E Data Sheet

Get Latest Price

Part Number:: H7N0308CF-E
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

H7N0203AB evaluate
Features: Low on-resistance RDS(on)=2.4 mΩtyp. Low drive current 4.5 V gate drive device can...
H7N0307AB evaluate
Features: Low on-resistance RDS(on)= 4.6 mΩtyp. Low drive current 4.5 V gate drive device ca...
H7N0307LD evaluate
Features: • Low on-resistance RDS (on) = 4.6 m typ.• Low drive current• 4.5 V ga...

Product Details

Description

Features:

• Low on-resistance R_{DS (on)} = 3.8 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source

Specifications

Item	Symbol	Value	Unit
Drain to source voltage	V_DSS	30	V
Gate to source voltage	V_GSS	±20	V
Drain current	I_D	60	A
Drain peak current	I_{D (pulse)} ^{Note 1}	240	A
Body-drain diode reverse drain current	I_DR	60	A
Channel dissipation	P_ch ^{Note 2}	30	W
Channel to case thermal impedance	_ch-c	4.17	°C/W
Channel to ambient thermal impedance	_ch-a	62.5	°C/W
Channel temperature	T_ch	150	°C
Storage temperature	T_stg	55 to +150	°C

Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

H7N0308CF-E

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Programmers, Development Systems(1039)

RF and RFID(1780)

Relays(6300)

Potentiometers, Variable Resistors(1370)

Tools(7611)

Prototyping Products(332)