Features: • Low on-resistanceRDS(on) = 26 m typ.• Low drive current.• Capable of 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 20 A ...
H7N0607DS: Features: • Low on-resistanceRDS(on) = 26 m typ.• Low drive current.• Capable of 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
20 |
A |
| Drain peak current |
ID(pulse)Note 1 |
80 |
A |
| Body-Drain diode reverse Drain current |
IDR |
20 |
A |
| Avalanche current |
IAPNote3 |
8 |
A |
| Avalanche energy |
EARNote3 |
5.48 |
mj |
| Channel dissipation |
Pch Note 2 |
25 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |