Features: • Low on-resistance• RDS(on) = 25 m typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID ...
H7N1004FN: Features: • Low on-resistance• RDS(on) = 25 m typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source ...
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| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
100 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
25 |
A |
| Drain peak current |
ID(pulse)Note 1 |
100 |
A |
| Body-Drain diode reverse Drain current |
IDR |
25 |
A |
| Avalanche current |
IAPNote3 |
15 |
A |
| Avalanche energy |
EARNote 3 |
22.5 |
mJ |
| Channel dissipation |
Pch Note 2 |
25 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |