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H9926S

Features: • RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capability• Fully Characterized Avalanche Voltage and Current• Ideal for Li ion Battery Pack ApplicationsApplic...

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SeekIC No. : 004357981 Detail

H9926S: Features: • RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capability• Fully...

H9926S Data Sheet

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Part Number:
H9926S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications


Application

• Battery Protection
• Load Switch
• Power Management


Specifications

Symbol Parameter Ratings Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID Drain Current (Continuous) 6 A
IDM Drain Current (Pulsed) *1 30 A
PD Total Power Dissipation @TA=25oC 2 W
PD Total Power Dissipation @TA=75oC 1.3 W
Tj, Tstg Operating and Storage Temperature Range -55 to +150 °C
RJA Thermal Resistance Junction to Ambient*2 62.5 °C/W

*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board


Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. H9926S has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)




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