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Part Number: H9926TS

 

 

 

 

Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been ...


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H9926TS General Description


This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

H9926TS Maximum Ratings

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25°C
Total Power Dissipation @TA=75°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
VDS
VGS
ID
IDM
PD
PD
Tj,Tstg
RJA
20
±12
6
30
1.5
0.96
-55 to +150
83
V
V
A
A
W
W
°C
°C/W
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board

H9926TS Features

• RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications

H9926TS Typical Application

• Battery Protection
• Load Switch
• Power Management

H9926TS Connection Diagram

H9926TS Connection Diagram

H9926TS datasheet

H9901-180
PDF/DataSheet Download

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