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MFG:HITACHI  Package Cooled:CDIP  

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Part Number: HA1127

 

MFG: HITACHI

Package Cooled: CDIP

 

 

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HA1127 Maximum Ratings

Item Symbol HA1127 Unit
Collector base voltage
VCBO
20
V
Collector substrate voltage
VCIO
20
V
Collector emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Allowable collector power
PC*1
300
mW
Allowable collector power
PC
750*2
mW
625*3
Operating temperature
Topr
55 to +125
°C
Storage temperature
Tstg
55 to +125
°C

Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 mW/°C above that temperature.
           2. Allowable value for the whole package.
              This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that temperature.
           3. See page 51.

HA1127 Connection Diagram

HA1127  Connection Diagram

HA1127 datasheet

HA1127
PDF/DataSheet Download

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