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MFG:HITACHI Package Cooled:CDIP

MFG:HITACHI Package Cooled:CDIP

| Item | Symbol | HA1127 | Unit |
| Collector base voltage |
VCBO |
20 |
V |
| Collector substrate voltage |
VCIO |
20 |
V |
| Collector emitter voltage |
VCEO |
15 |
V |
| Emitter-base voltage |
VEBO |
5 |
V |
| Collector current |
IC |
50 |
mA |
| Allowable collector power |
PC*1 |
300 |
mW |
| Allowable collector power |
PC |
750*2 |
mW |
|
625*3 | |||
| Operating temperature |
Topr |
55 to +125 |
°C |
| Storage temperature |
Tstg |
55 to +125 |
°C |
Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 mW/°C above that temperature.
2. Allowable value for the whole package.
This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that temperature.
3. See page 51.
HA1127
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