HAL800

Features: high precision linear Hall effect sensor with ratiometric output multiple programmable magnetic characteristics with non-volatile memory digital signal processing temperature characteristics programmable for matching all common magnetic materials programmable clamping voltages programmi...

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SeekIC No. : 004358532 Detail

HAL800: Features: high precision linear Hall effect sensor with ratiometric output multiple programmable magnetic characteristics with non-volatile memory digital signal processing temperature characterist...

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Part Number:
HAL800
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

high precision linear Hall effect sensor with ratiometric output
multiple programmable magnetic characteristics with non-volatile memory
digital signal processing
temperature characteristics programmable for matching all common magnetic materials
programmable clamping voltages
programming with a modulation of the supply voltage
lock function and redundancy for EEPROM memory
operates from −40 °C up to 150 °C ambient temperature
operates from 4.5 V up to 5.5 V supply voltage
operates with static magnetic fields and dynamic magnetic fields up to 2 kHz
choppered offset compensation
overvoltage and reverse-voltage protection at all pins
magnetic characteristics extremely robust against mechanical stress
short-circuit protected push-pull output
EMC optimized design



Application

Due to the sensor's versatile programming characteristics,the HAL 800 is the optimal system solution for applications such as:
contactless potentiometers,
rotary position measurement,
linear position detection,
magnetic field and current measurement




Specifications

Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
-8.5
8.5
V
VDD
Supply Voltage
1
-14.41)2)
14.41)2)
V
-IDD
Reverse Supply Current
1
-
501)
mA
IZ
Current through Protection Device
1 or 3
-3004)
3004)
mA
VOUT
Output Voltage
3
-56)
-56)
8.53)
14.43)2)
V
VOUT-VDD
Excess of Output Voltage
over Supply Voltage
3,1
2
mA
IOUT
Continuous Output Current
3
-10
10
mA
tSh
Output Short Circuit Duration
3
-
10
min
TS
Storage Temperature Range
-65
150
°C
TJ
Junction Temperature Range
-40
-40
1705)
150
°C
1) as long as TJmax is not exceeded
2) t < 10 minutes (VDDmin = −15 V for t < 1min, VDDmax = 16 V for t < 1min)
3) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)
4) t < 2 ms
5) t < 1000h
6) internal protection resistor = 100



Description

The HAL800 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage.

The HAL800 external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the EEPROM programming, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are detailed explained in Section 2.2. on page 7.

The setting of the LOCK register disables the programming of the EEPROM memory for all time. This HAL800 register cannot be reset.

As long as the LOCK register is not set, the output characteristic can be adjusted by modifying the EEPROM registers. The HAL800 IC is addressed by modulating the supply voltage (see Fig. 21). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command,the sensor reads or writes the memory and answers with a digital signal on the output pin. The analog output is switched off during the communication.

Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory is equipped with redundant EEPROM cells. In addition, the HAL800 sensor IC is equipped with devices for overvoltage and reverse voltage protection at all pins.




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