HAT2165H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 55A
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds: 5180pF @ 10V


Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
   R_DS(on) = 2.5 m typ. (at V_GS = 10 V)


Specifications

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	30	V
Gate to source voltage		VGSS	±20	V
Drain current		ID	55	A
Drain peak current		ID(pulse)1	220	A
Body-drain diode reverse drain current		IDR	55	A
Avalanche current		IAP3	30	A
Avalanche energy		EAR3	90	mJ
Channel dissipation		Pch2	30	W
Channel to Case Thermal Resistance		ch-C	4.17	°C/W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	-55to+150	°C

Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C