DescriptionThe HB52RD168GB-F belongs to HB52RD168GB family which is a 16M * 64 * 1 bank synchronous dynamic RAM micro dual in-line memory module (Micro DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP package and 1 piece of serial EEP RO M (2- kbit EEP RO M ) for Presence Det...
HB52RD168GB-F: DescriptionThe HB52RD168GB-F belongs to HB52RD168GB family which is a 16M * 64 * 1 bank synchronous dynamic RAM micro dual in-line memory module (Micro DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5...
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Features: · 168-pin socket type package (dual lead out)-Lead pitch : 1.27 mm· 3.3 V ( ±0.3 V) powe...
Features: • Fully compatible with : JEDEC standard outline 8-byte DIMM: Intel PCB Reference ...
DescriptionThe HB52RD328DC-F belongs to HB52RD328DC family which is a 16M * 64 * 2 banks Synchrono...
The HB52RD168GB-F belongs to HB52RD168GB family which is a 16M * 64 * 1 bank synchronous dynamic RAM micro dual in-line memory module (Micro DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP package and 1 piece of serial EEP RO M (2- kbit EEP RO M ) for Presence Detect (P D). De couplcitors are mounted beside TCP on the module board. Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. An out line of the product is 144-pin Zig Zag Dual tabs socket type compact and thin package: Therefore, HB52RD168GB-F makes high density mounting possible without surface mount technology. It provides common data input s and out puts.
The features of HB52RD168GB-F can be summarized as (1)144-pin Zig zag dual tabs socket type - outline: 38.00 mm (Length) * 30.00 mm (Height) * 3.80 mm (Thickness) - lead pitch: 0.50 mm; (2)3.3 V power supply; (3)clock frequency: 100 MHz (max); (4)LVTTL interface; (5)data bus width: * 64 Non parity; (6)sing: le pulsed RAS; (7)4 banks can operates simultaneously and independently; (8)burst read/write operation and burst read/single write operation capability; (9)programmable burst length : 1/2/4/8/full page; (10)2 variations of burst sequence -sequential (BL = 1/2/4/8/full page) -interleave (BL = 1/2/4/8); (11)programmable CE latency : 2/3 (HB52RD168GB-A6F/A6FL) : 3 (HB52RD168GB-B6F/B6FL); (12)byte control by DQMB; (13)refresh cycles: 4096 refresh cycles/64 ms; (14)2 variations of refresh -auto refresh -self refresh; (15)low self refresh current: HB52RD168GB-A6FL/B6FL (L-version); (16)full page burst length capability -sequential burst -burst stop capability.
The absolute maximum ratings of HB52RD168GB-F are (1)voltage on any pin relative to V SS VT: 0.5 to V CC + 0.5 ( 4.6 (max)) V; (2)supply voltage relative to V SS VCC: 0.5 to +4.6 V; (3)short circuit output current Iout: 50 mA; (4)power dissipation PT: 16 W; (5)operating temperature Topr: 0 to +65 °C; (6)storage temperature Tstg: 55 to +125 °C.