Features: · Epitaxial Planar Die Construction· Lead Free By Design/RoHS Compliant (Note 1)· Green Device (Note 2)PinoutSpecifications Parameter Symbol Min Units Power Dissipation (Note 3) Pd 200 °C Thermal Resistance, Junction to Ambient Air (Note 3) RJA 625 ...
HBDM60V600W: Features: · Epitaxial Planar Die Construction· Lead Free By Design/RoHS Compliant (Note 1)· Green Device (Note 2)PinoutSpecifications Parameter Symbol Min Units Power Dissipatio...
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| Parameter |
Symbol |
Min |
Units |
| Power Dissipation (Note 3) |
Pd |
200 |
°C |
| Thermal Resistance, Junction to Ambient Air (Note 3) |
RJA |
625 |
°C |
| Operating and Storage Junction Temperature Range |
VEBO |
-55 to +150 |
V |
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 8 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
| Part Number | HBDM60V600W |
| Product Type | NPN + PNP |
| VCEO (V) | 65 -60 |
| IC (A) | 0.5 -0.6 |
| ICM (A) | - |
| PD (W) | 0.2 |
| hFE Min | 100 100 |
| hFE Max | 300 |
| @ IC (A) | 0.1 -0.15 |
| VCE (SAT) Max (mV) | 400 -300 |
| @ IC (A) | 0.1 -0.15 |
| @ IB (mA) | 10 -15 |
| fT Min (MHz) | 100 100 |
| RCE (SAT) (m) | - |