HBFP0420_1220053

• Ideal for High Gain, Low Noise Applications
• Transition Frequency f_T = 25 GHz
• Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P_1dB of 12 dBm  t 2 V and 20 mA
• Can be Used Without Impedance Matching

Hewlett Packard's HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

HBFP-0420 provides an associated gain of 17 dB, noise figure of  1.1 dB, and P1dB of 12 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0420 is ideal for cellular/PCS handsets as well as  for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applica-tions at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond.