HD1750JL

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 10 V
Collector- Emitter Voltage VCEO Max : 800 V
Package / Case : TO-264
Maximum DC Collector Current : 24 A


Features:

`State-of-the-art technology: diffused collector
  "enhanced generation" EHVS1
`Wider range of optimum drive conditions
`Less sensitive to operating temperature variation
`In compliance with the 2002/93/EC European directive


Application

High-definition and slim CRT TV and monitors


Specifications

SYMBOL	PARAMETER	Value	UNIT
VCBO	Collector-base voltage(VBE = 0)	1700	V
VCEO	Collector-emitter voltage(IB = 0)	800	V
VEBO	Emitter-base voltage(IC = 0)	10	V
IC	Collector Current	24	A
ICM	Collector peak current (tP < 5ms)	36	A
IB	Base Current	12	A
IBM	Base peak current (tP < 5ms)	18	A
PTOT	Total dissipation at Tc = 25	200	W
Tj	Junction temperature	150
TSTG	Storage temperature	-65 to +150

Description

The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD1750JL show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.

Parameters:

Technical/Catalog Information	HD1750JL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	800V
Current - Collector (Ic) (Max)	24A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 3A, 12A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Drawing Number	497; MTO-264; JL; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HD1750JL HD1750JL