HD1760JL

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 10 V
Collector- Emitter Voltage VCEO Max : 800 V
Package / Case : TO-264
Maximum DC Collector Current : 36 A


Features:

State-of-the-art technology: diffused collector "enhanced generation" EHVS1
Wide range of optimum drive conditions
Stable performance versus operating temperature variation


Application

High-definition and slim CRT TV and monitors


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VBE = 0)	1700	V
VCEO	Collector-emitter voltage (IB = 0)	800	V
VEBO	Emitte-base voltage (IC = 0)	10	V
IC	Collector current	36	A
ICM	Collector peak current (tP < 5ms)	54	A
IB	Base current	18	A
IBM	Base peak current (tP < 5ms)	27	A
PTOT	Total dissipation at Tc = 25	200	W
TSTG	Storage temperature	-55 to 150
TJ	Max. operating junction temperature	150

Description

The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD1760JL show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.

Parameters:

Technical/Catalog Information	HD1760JL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	800V
Current - Collector (Ic) (Max)	36A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 4.5A, 18A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Drawing Number	497; MTO-264; JL; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HD1760JL HD1760JL