HEMT-3300

Features:

• High Efficiency
• Nonsaturating Output
• Narrow Beam Angle
• Visible Flux Aids Alignment
• Bandwidth: DC to 3 MHz
• IC Compatible/Low Current Requirement


Pinout




Specifications

Power Dissipation .................................................................... 120 mW
                                            (derate linearly from 50°C at 1.6 mW/°C)
Average Forward Current ............................................................30 mA
                                            (derate linearly from 50°C at 0.4 mA/ °C)
Peak Forward Current ....................................................... See Figure 5
Operating and Storage Temperature Range .............-55°C to +100°C
Lead Soldering Temperature................................  260°C for 5 seconds
                                                                (1.6 mm [0.063 in.] from body)


Description

The HEMT-3300 is a visible,  near-IR, source using a GaAsP on GaP LED chip optimized for maximum quantum efficiency at 670 nm. The emitter's beam is sufficiently narrow to minimize stray flux problems, yet broad enough to simplify optical alignment.

This HEMT-3300 is suitable for use in consumer and industrial applications such as optical transducers and encoders, smoke detectors, assembly line monitors, small parts counters, paper tape readers, and fiber optic drivers.