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HGT1S20N60C3R
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MFG:HARRIS Package Cooled:DIP/SOP D/C:08+

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Part Number: HGT1S20N60C3R

MFG: HARRIS

Package Cooled: DIP/SOP

D/C: 08+

Description: This family of IGBTs was designed for optimum performance in the demanding world of motor control oper...

HGT1S20N60C3R General Description

This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.

The electrical specifications include typical Turn-On and Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same T_Jas the IGBT under test.

Formerly Developmental Type TA49047.

HGT1S20N60C3R Maximum Ratings

                                                                                                                             ALL TYPES        UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .BV_CES                   600                  V
Collector Current Continuous
    At T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . I_C25                     40                    A
    At T_C = 110^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110                     20                    A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .. .I_CM                     80                    A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . V_GES                     ±20                  V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . .. . . . . . . V_GEM                     ±30                  V
Switching Safe Operating Area at T_J = 150^oC, Fig. 12 . . . . . . . .. . .S_SOA                 80A at 600           V
Power Dissipation Total at T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . P_D                     164                  W
Power Dissipation Derating T_C > 25^oC . . . . . . . . . . . . . . . . . . . . . . . . .                      1.32               W/^oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV                      100                 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . T_J, T_STG                 -40 to 150          ^oC
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . .T_L                       260               ^oC
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . t_SC                       10                  ms
NOTES:
   1. Pulse width limited by maximum junction temperature.
   2. V_CE(PK)= 440V, T_J = 150oC, R_GE = 10W.

HGT1S20N60C3R Features

• 40A, 600V T_J = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time at T_J= 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at T_J = 150oC. . . . . . . . . . .. 10s
• Low Conduction Loss

HGT1S20N60C3R datasheet

HGT1S20N60C3R
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Datasheet: HGT1S20N60C3R
File Size: 110307 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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