Package Cooled:7850 D/C:Intersil
Package Cooled: 7850
D/C: Intersil
Description: The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of ...
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49311.
HGT1S2N120CNDS
PDF/DataSheet Download
The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. HGTP2N120CN and HGT1S2N120CN havethe high...
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high ...
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedan...
IGBT UFS N-CHAN 600V 45A TO-247
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGT1S20N60C3S have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower...
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3RS demonstrate RUGGED performance capability when subjected to harsh SHORT CIR...
Price: 0.4-0.8 USD
MSOP, switched capacitor, voltage converter, 100 mA, 80 kHz, 6V
Price: 1-10 USD
Sector Flash Memory, SOP, 0.32μm
Price: 2.05-2.25 USD
128M(134,217,728)x8bit, NAND Flash Memory, 48 - Pin TSOP, -0.6 to + 4.6 V, Samsung semiconductor
Price: 0.0075-0.015 USD
On-Board Type (DC) EMI Suppression Filter, 0.30 OHM, 200MA, SMD/SMT, Murata Manufacturing Co., Ltd.
Price: 1-4 USD
TO-3P, Low VF, Super high speed switching, schottky barrier diode,
Price: 2-2.4 USD
high voltage, high current, silicon expitaxial planar NPN transistor, CAN-3, 6V
Price: 4-10 USD
DVD Optical laser Lens, SF-HD60, with DV34 MECHANISM, Sanyo Semicon Device
Price: 5-8 USD
GaAs MMIC, 10 watt, T/R switch DC, SOP, 1.6 W, +13 Vdc, +40 dBm
Price: 1-10 USD
diode module, 1700V, heat transfer, hard soldered joints, UL recognized, SKKT92/16E, Semikron Inte...
Price: 30-32 USD
thyristor/diode module, 137 A, 1.8 V, hard soldered joints, 1.6 mΩ
Price: 1-2 USD
10-bit, analog-to-digital converter, serial control, 11 analog inputs, CMOS Technology, DIP
Price: 0.1-2 USD
dual operational amplifier, MSOP, low supply voltage, low supply current, 1.5V to 7V
