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HGT1S3N60B3S

Features: • 7A, 600V, TC = 25oC• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC• Short Circuit Rating• Low Conduction LossSpecifications HGTD3N60B3S,HGT1S3N60B3SHGTP3N60B3 Collector to Emitter Voltage ...

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SeekIC No. : 004362111 Detail

HGT1S3N60B3S: Features: • 7A, 600V, TC = 25oC• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC• Short Circuit Rating• Low Conducti...

HGT1S3N60B3S Data Sheet

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Part Number:
HGT1S3N60B3S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 7A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss


Specifications

HGTD3N60B3S,
HGT1S3N60B3S
HGTP3N60B3
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25oC
IC25
7.0

A

At TC = 110oC
IC110
3.5
A
Collector Current Pulsed (Note 1)
ICM
20
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC (Figure 2)
SSOA
18A at 600V
Power Dissipation Total at TC = 25oC
PD
33.3
W
Power Dissipation Derating TC > 25oC
0.27
W/oC
Reverse Voltage Avalanche Energy
EARV
100
mJ
Operating and Storage Junction Temperature Range
TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 12V
tSC
5
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V
tSC
10
µs



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