HGT1S3N60C3D

Features:

• 6A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Specifications

		HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS	UNITS
Collector-Emitter Voltage	BVCES	600	V
Collector Current Continuous At TC = 25°C	IC25	6	A
At TC = 110°C	IC110	3	A
Collector Current Pulsed (Note 1)	ICM	24	A
Gate-Emitter Voltage Continuous	VGES	±20	V
Gate-Emitter Voltage Pulsed	VGEM	±30	V
Switching Safe Operating Area at TJ = 150°C, Fig. 14	SSOA	18A at 480V
Power Dissipation Total at TC = 25°C	PD	33	W
Power Dissipation Derating TC > 25°C		0.27	W/°C
Operating and Storage Junction Temperature Range	TJ, TSTG	-40 to 150	°C
Maximum Lead Temperature for Soldering	TL	260	°C
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6	tSC	8	s

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = 125°C, R_GE = 82.


Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.