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MFG:KA/INF  Package Cooled:TO  

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Part Number: HGT1S3N60C3D

 

MFG: KA/INF

Package Cooled: TO

 

Description: The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best featur...


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HGT1S3N60C3D General Description


The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

HGT1S3N60C3D Maximum Ratings

    HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS UNITS
Collector-Emitter Voltage BVCES 600 V
Collector Current Continuous At TC = 25°C IC25 6 A
                                               At TC = 110°C IC110 3 A
Collector Current Pulsed (Note 1) ICM 24 A
Gate-Emitter Voltage Continuous VGES ±20 V
Gate-Emitter Voltage Pulsed VGEM ±30 V
Switching Safe Operating Area at TJ = 150°C, Fig. 14 SSOA 18A at 480V  
Power Dissipation Total at TC = 25°C PD 33 W
Power Dissipation Derating TC > 25°C   0.27 W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -40 to 150 °C
Maximum Lead Temperature for Soldering TL 260 °C
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 tSC 8 s
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125°C, RGE = 82.

HGT1S3N60C3D Features

• 6A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGT1S3N60C3D datasheet

HGT1S3N60C3D
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