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MFG:Harris  Package Cooled:Original  

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Part Number: HGTD3N60C3

 

MFG: Harris

Package Cooled: Original

 

Description: The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bip...


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HGTD3N60C3 General Description


The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-statevoltage drop varies only moderately between 25oCand150oC.

The IGBT is ideal for many high voltage switchingapplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and drivers for solenoids, relaysand contactors.Formerly developmental type TA49113. 

HGTD3N60C3 Maximum Ratings

ALL TYPES
HGTD3N60C3S

UNITS

Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25oC
IC25
6
A
At TC = 110oC .
IC110
3
A
Collector Current Pulsed (Note 1)
ICM
24
A
Gate to Emitter Voltage Continuous
VGES
± 20
V
Gate to Emitter Voltage Pulsed
VGEM
± 30
V
Switching Safe Operating Area at TJ = 150oC, Figure 14
SSOA
18A at 480V
Power Dissipation Total at TC = 25oC .
EAS
33
W
Power Dissipation Total at TC = 25oC .
PD
0.27
W/oC
Reverse Voltage Avalanche Energy.
100
mJ
Operating and Storage Junction Temperature Range
TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6
tSC
8
µs

HGTD3N60C3 Features

• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time  . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss

HGTD3N60C3 datasheet

HGTD3N60C3
PDF/DataSheet Download

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