HGTD3N60C3

Features:

• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time  . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss


Specifications

ALL TYPES HGTD3N60C3S			UNITS
Collector to Emitter Voltage	BVCES	600	V
Collector Current Continuous
At TC = 25oC	IC25	6	A
At TC = 110oC .	IC110	3	A
Collector Current Pulsed (Note 1)	ICM	24	A
Gate to Emitter Voltage Continuous	VGES	± 20	V
Gate to Emitter Voltage Pulsed	VGEM	± 30	V
Switching Safe Operating Area at TJ = 150oC, Figure 14	SSOA	18A at 480V
Power Dissipation Total at TC = 25oC .	EAS	33	W
Power Dissipation Total at TC = 25oC .	PD	0.27	W/oC
Reverse Voltage Avalanche Energy.		100	mJ
Operating and Storage Junction Temperature Range	TJ, TSTG	-55 to 150	oC
Maximum Lead Temperature for Soldering	TL	260	oC
Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6	tSC	8	µs

Description

The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-statevoltage drop varies only moderately between 25oCand150oC.

The HGTD3N60C3 and HGTD3N60C3S IGBT is ideal for many high voltage switchingapplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and drivers for solenoids, relaysand contactors.Formerly developmental type TA49113.