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MFG:FAIRCHILD/INTERSIL  Package Cooled:TO  

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Part Number: HGTD7N60C3

 

MFG: FAIRCHILD/INTERSIL

Package Cooled: TO

 

Description: The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the ...


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HGTD7N60C3 General Description


The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25° C and 150 °C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls,power supplies and drivers for solenoids, relays and contactors.

HGTD7N60C3 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At T = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At T = 110° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PD
Power Dissipation Derating T C> 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , TJ STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

HGTD7N60C3 Features

14A, 600V at Tc = 25 °C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . .140ns at TJ = 150° C
Short Circuit Rating
Low Conduction Loss

HGTD7N60C3 datasheet

HGTD7N60C3
PDF/DataSheet Download

  • Datasheet: HGTD7N60C3
  • File Size: 157202 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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