HGTG11N120CN General Description
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49291.
HGTG11N120CN Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC= 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 43 A
At TC= 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 22A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGEM ±30 V
Switching Safe Operating Area at TJ= 150 (Figure 2) . . . . . . . . .SSOA 55A at 1200V
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PD 298 W
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .2.38 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE= 15V . . . . . . . . . . . . . . . . . . . . . tSC 8µs
Short Circuit Withstand Time (Note 2) at VGE= 12V . . . . . . . . . . . . . . . . . . . ..tSC 15µs
HGTG11N120CN Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
HGTG11N120CN Connection Diagram

- ·HGT1N30N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 147560 KB

- ·HGT1N40N60A4
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB

- ·HGT1N40N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB

- ·HGT1S10N120BNS
- FAIRCHILD [Fairchild Semiconductor]
- 35A, 1200V, NPT Series N-Channel IGBT
- 83631 KB

- ·HGT1S11N120CNS
- INTERSIL [Intersil Corporation]
- 43A, 1200V, NPT Series N-Channel IGBT
- 141382 KB

- ·HGT1S12N60A4DS
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 404005 KB

- ·HGT1S12N60A4S
- INTERSIL [Intersil Corporation]
- 600V, SMPS Series N-Channel IGBT
- 117801 KB

- ·HGT1S12N60A4S9A
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBTs
- 235127 KB

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