HGTG10N120BND

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Power Dissipation : 298 W
Collector-Emitter Saturation Voltage : 2.45 V
Continuous Collector Current at 25 C : 17 A


Features:

• 35A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss




Pinout






Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 35 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 17 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. I_CM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . SSOA 55A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 298 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 8 µs
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 15 µs

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
HGTG10N120BND	Full Production	RoHS Compliant	$4.82	TO-247	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: 10N120BND

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG10N120BND is available. Click here for more information .

Description

The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. HGTG10N120BND is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.

The HGTG10N120BND IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49302.

Parameters:

Technical/Catalog Information	HGTG10N120BND
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG10N120BND HGTG10N120BND