HGTG18N120BND

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 2.45 V
Continuous Collector Current at 25 C : 54 A
Power Dissipation : 390 W


Features:

• 54A, 1200V, T_C= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1200 V
Collector Current Continuous At T_C= 25. . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 54 A
Collector Current Continuous At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . .I_C110 26 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 160A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_GEM ±30 V
Switching Safe Operating Area at T_J= 150 (Figure 2) . . . . . . . SSOA 100A at 1200V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . P_D 390W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .3.12 W/
Operating and Storage Junction Temperature Range . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE= 15V . . . . . . . . . . . . . . . . . . . . . t_SC 8µs
Short Circuit Withstand Time (Note 2) at V_GE= 12V . . . . . . . . . . . . . . . . . . . ..t_SC 15µs


Description

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. HGTG18N120BND is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The HGTG18N120BND IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49304.

Parameters:

Technical/Catalog Information	HGTG18N120BND
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	54A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 18A
Power - Max	390W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG18N120BND HGTG18N120BND