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HGTG20N50C1D

Features: • 20A, 500V• Latch Free Operation• Typical Fall Time < 500ns• High Input Impedance• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60nsPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ....

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SeekIC No. : 004362156 Detail

HGTG20N50C1D: Features: • 20A, 500V• Latch Free Operation• Typical Fall Time < 500ns• High Input Impedance• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60n...

HGTG20N50C1D Data Sheet

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Part Number:
HGTG20N50C1D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 20A, 500V
• Latch Free Operation
• Typical Fall Time < 500ns
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 500 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 26 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ICM 35 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Diode Forward Current at TC = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF25 26 A
Diode Forward Current at TC = +90. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. IF90 20 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260


Description

The HGTG20N50C1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N50C1D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. HGTG20N50C1D IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.




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